Journal of Crystal Growth

Aims & Scope

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices.

Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials.

A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	2

SJR (SCImago Journal Rank)

Year	Value
2024	0.424

Quartile

Year	Value
2024	Q2

h-index

Year	Value
2024	168

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Chemistry, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Filamentous growth of carbon through benzene decomposition

  Citation: 1367

  Authors: A., M., T.

• Growth mechanism and growth habit of oxide crystals

  Citation: 1032

  Authors: Wen-Jun, Er-Wei, Wei-Zhuo, Zhi-Wen

• Vapor growth of diamond on diamond and other surfaces

  Citation: 952

  Authors: B.V., L.L., B.V.

• Fundamental aspects of VLS growth

  Citation: 892

  Authors: E.I.

• ZnO Schottky ultraviolet photodetectors

  Citation: 837

  Authors: S., H., Y., Z., Y., H.

• Diamond synthesis from gas phase in microwave plasma

  Citation: 835

  Authors: Mutsukazu, Yoichiro, Seiichiro, Nobuo

• The attachment energy as a habit controlling factor

  Citation: 666

  Authors: P., P.

• Control of preferred orientation for ZnO films: control of self-texture

  Citation: 645

  Authors: Norifumi, Tokihiro, Seiki, Jifang, Taichiro

• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

  Citation: 613

  Authors: Isamu, Hiroshi, Yasuo, Kazumasa, Nobuhiko

• Electrical and optical properties of ZnO transparent conducting films by the sol–gel method

  Citation: 591

  Authors: Jin-Hong, Kyung-Hee, Byung-Ok

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