Solid-State Electronics

Aims & Scope

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics, sensing, micro- and nano-mechanical (MEMS/NEMS) systems, quantum computation and communication.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	1.4

SJR (SCImago Journal Rank)

Year	Value
2024	0.352

Quartile

Year	Value
2024	Q3

h-index

Year	Value
2024	108

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

  Citation: 1275

  Authors: L.M.

• Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

  Citation: 1266

  Authors: J.B., R.W.

• Field and thermionic-field emission in Schottky barriers

  Citation: 1207

  Authors: F.A., R.

• Experiments on Ge-GaAs heterojunctions

  Citation: 991

  Authors: R.L.

• A review of some charge transport properties of silicon

  Citation: 920

  Authors: C., C., G., A.

• Models for contacts to planar devices

  Citation: 852

  Authors: H.H.

• Problems related to p-n junctions in silicon

  Citation: 788

  Authors: William

• Multiple-gate SOI MOSFETs

  Citation: 784

  Authors: Jean-Pierre

• A unified mobility model for device simulation—I. Model equations and concentration dependence

  Citation: 757

  Authors: D.B.M.

• Micropower energy harvesting

  Citation: 724

  Authors: R.J.M., R., I., C., R.

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