Semiconductor Science and Technology

Aims & Scope

Devoted to semiconductor research, Semiconductor Science and Technology's multidisciplinary approach reflects the far-reaching nature of this topic.

The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	2.1
2024	1.90

SJR (SCImago Journal Rank)

Year	Value
2024	0.405

Quartile

Year	Value
2024	Q2

h-index

Year	Value
2024	129

Journal Rank

Year	Value
2024	13682

Journal Citation Indicator

Year	Value
2024	1604

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Transparent conducting oxide semiconductors for transparent electrodes

  Citation: 1910

  Authors: Tadatsugu

• THz imaging and sensing for security applications—explosives, weapons and drugs

  Citation: 1486

  Authors: John F, Brian, Feng, Dale, Robert, Filipe, David

• Wide-bandgap semiconductor ultraviolet photodetectors

  Citation: 1254

  Authors: E, F, F

• Recent progress in Ga₂O₃power devices

  Citation: 998

  Authors: Masataka, Kohei, Hisashi, Yoshinao, Akinori, Akito, Takekazu, Shigenobu

• Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits

  Citation: 853

  Authors: Ingrid De

• First principles materials design for semiconductor spintronics

  Citation: 787

  Authors: K, H

• Introduction to topological superconductivity and Majorana fermions

  Citation: 772

  Authors: Martin, Karsten

• Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

  Citation: 762

  Authors: Daniele

• ZnO nanorods: synthesis, characterization and applications

  Citation: 751

  Authors: Gyu-Chul, Chunrui, Won Il

• High-mobility Si and Ge structures

  Citation: 702

  Authors: Friedrich

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