Russian Microelectronics

Aims & Scope

Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology.

Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc.

Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies.

The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices.

The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.

View Aims & Scope

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Metrics & Ranking

SJR (SCImago Journal Rank)

Year	Value
2024	0.194

Quartile

Year	Value
2024	Q4

h-index

Year	Value
2024	20

Journal Rank

Year	Value
2024	21596

Journal Citation Indicator

Year	Value
2024	183

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time

  Citation: 58

  Authors: A. V., K. V.

• Studying the Thermodynamic Properties of Composite Magnetic Material Based on Anodic Alumina

  Citation: 52

  Authors: A. I., D. L., O. A., T. I., D. I., A. V.

• New approach to the mathematical modeling of thermal regimes for electronic equipment

  Citation: 43

  Authors: G. V., M. A.

• Anisotropic Etching of SiO2 in High-Voltage Gas-Discharge Plasmas

  Citation: 42

  Authors: N. L., V. A., A. I.

• Linear Standard for SEM–AFM Microelectronics Dimensional Metrology in the Range 0.01–100 μm

  Citation: 39

  Authors: Ch. P., E. S., Yu. A., Yu. V., Yu. I., A. M., A. V.

• Formation of bidomain structure in lithium niobate plates by the stationary external heating method

  Citation: 37

  Authors: A. S., S. G., R. N., D. A., S. V., I. V., M. D., Yu. N.

• Luminescent Properties of ZnO Films Doped with Group-IB Acceptors

  Citation: 30

  Authors: A. N., V. T., I. I., T. V., M. N.

• SEM Linear Measurement in a Wide Magnification Range

  Citation: 28

  Authors: Ch. P., E. S., Yu. A., Yu. V., Yu. I., A. V.

• Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia

  Citation: 28

  Authors: A. I., Sh. M., R. S., E. K., D. K., M. Kh., I. M.

• Modeling thermoelectric generators using the ANSYS software platform: Methodology, practical applications, and prospects

  Citation: 27

  Authors: A. S., V. V., S. B., A.

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