Modern Electronic Materials
Published by Pensoft Publishers (Journal Finder)
ISSN : 2452-2449 eISSN : 2452-1779
Abbreviation : Mod. Electron. Mater.
Aims & Scope
Modern Electronic Materials (MOEM) is a peer-reviewed open access journal publishing original research articles on manufacturing and studying the properties of semiconducting, magnetic and dielectric materials for micro- and nanoelectronics.
The publication addresses topics such as material science and technology of single crystal semiconductors, dielectrics and magnetic materials; their physical properties; technology of multilayered structures and composite materials (including nanostructuring ones); structure and properties of boundary surfaces; non-thermal activation methods of physical processes; quantum-sized structures and nanocrystals; properties of amorphous and organic semiconductors; modeling of thermophysical, hydro- and gasodynamic conditions of single crystal and epitaxial layer growth for electronics; processes of semiconductor materials synthesis and purification.
View Aims & ScopeMetrics & Ranking
SJR (SCImago Journal Rank)
| Year | Value |
|---|---|
| 2024 | 0.170 |
Quartile
| Year | Value |
|---|---|
| 2024 | Q4 |
h-index
| Year | Value |
|---|---|
| 2024 | 5 |
Journal Rank
| Year | Value |
|---|---|
| 2024 | 23126 |
Journal Citation Indicator
| Year | Value |
|---|---|
| 2024 | 33 |
Abstracting & Indexing
Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.
Subjects & Keywords
Journal’s research areas, covering key disciplines and specialized sub-topics in Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.
Licensing & Copyright
This journal operates under an Open Access model. Articles are freely accessible to the public immediately upon publication. The content is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0), allowing users to share and adapt the work with proper attribution.
Copyright remains with the author(s), and no permission is required for non-commercial use, provided the original source is cited.
Policy Links
This section provides access to essential policy documents, guidelines, and resources related to the journal’s publication and submission processes.
- Aims scope
- Homepage
- Oa statement
- Author instructions
- License terms
- Review url
- Board url
- Copyright url
- Preservation url
- Apc url
- License
APC Details
The journal’s Article Processing Charge (APC) policies support open access publishing in Materials Science and Physics and Astronomy, ensuring accessibility and quality in research dissemination.
This journal does not charge a mandatory Article Processing Charge (APC). However, optional open access publication may incur fees based on the publisher’s policies.
Explore journals without APCs for alternative publishing options.
Most Cited Articles
The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.
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X-ray peak profile analysis of CoAl2O4 nanoparticles by Williamson-Hall and size-strain plot methods
Citation: 36
Authors: H., K, S.
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Optical characteristics of single crystal Gd3Al2Ga3O12 : Ce
Citation: 16
Authors: Nina S., Oleg A., Valentina M., Anna P., Evgeniya V.
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Magnetic and dielectric characteristics of Nd and Nd-Mg substituted strontium hexaferrite
Citation: 11
Authors: Basharat, Bilal Hamid
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Carbon nanostructures containing boron impurity atoms: synthesis, physicochemical properties and potential applications
Citation: 10
Authors: Sergey V.
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Methods of dislocation structure characterization in A IIIB V semiconductor single crystals
Citation: 10
Authors: Stanislav N., Aleksandr V., Nikita Yu., Yuri N., Elena V., Vyacheslav V.
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Tailoring of stable induced domains near a charged domain wall in lithium niobate by probe microscopy
Citation: 9
Authors: Alexander M., Tatiana S., Ilya V., Dmitry A., Alexander A., Andrei V., Mikhail D., Andrey A., Yury N.
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Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 2: Hydrochlorination and redistribution
Citation: 9
Authors: Vladimir N., Oleg A., Tatyana V.
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Synthesis, structure and electromagnetic properties of FeCoAl/C nanocomposites
Citation: 9
Authors: Dmitriy G., Lev V., Egor V., Andrey A., Alena V., Vitaly A., Evgeniy Yu.
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Synthesis, growth, structural, optical and electrical properties of novel organic single crystal: p-toluidinium salicylate
Citation: 8
Authors: Shanmugam, M. Nizam, G., R. Mohan
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Photonic and Terahertz applications as the next gallium arsenide market driver
Citation: 8
Authors: Nikolay A., Arkady V., Vadim V.