Microelectronics Reliability

Aims & Scope

Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation.

The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation.

Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work.

Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers.

Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes.

All contributions are subject to peer review by leading experts in the field.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	1.9

SJR (SCImago Journal Rank)

Year	Value
2024	0.436

Quartile

Year	Value
2024	Q2

h-index

Year	Value
2024	110

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Selected failure mechanisms of modern power modules

  Citation: 825

  Authors: Mauro

• A review of recent MOSFET threshold voltage extraction methods

  Citation: 808

  Authors: A., F.J., J.J., A., M., Y.

• Light emitting diodes reliability review

  Citation: 677

  Authors: Moon-Hwan, Diganta, P.V., Michael

• A comprehensive model of PMOS NBTI degradation

  Citation: 617

  Authors: M.A., S.

• Reliability challenges in 3D IC packaging technology

  Citation: 574

  Authors: K.N.

• An ensemble model for predicting the remaining useful performance of lithium-ion batteries

  Citation: 568

  Authors: Yinjiao, Eden W.M., Kwok-Leung, Michael

• Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

  Citation: 480

  Authors: Tibor

• Solder joint fatigue models: review and applicability to chip scale packages

  Citation: 457

  Authors: W.W, L.T, G.S

• NBTI degradation: From physical mechanisms to modelling

  Citation: 441

  Authors: V., M., C.

• GaN HEMT reliability

  Citation: 440

  Authors: J.A., J.

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