Journal of Vacuum Science and Technology B

Aims & Scope

JVSTB is devoted to publishing reports of original research, letters, and review articles on microelectronics and nanotechnology.

The scope includes, but is not limited to, the following topics: Compound semiconductor electronics and optoelectronics; Dielectrics in micro- and nanoelectronics; Graphene, carbon nanotubes, and fullerenes: materials & devices; Group IV semiconductor microelectronics; Lithography; Microelectromechanical and nanoelectromechanical systems and devices (MEMS & NEMS); Nanometer science and nanotechnology; Nanostructured materials and devices including nanowires, nanoparticles and quantum dots, and organic and molecular electronics; Photovoltaics, batteries, and other devices for energy conversion and storage; Plasmonics; Spintronics and magnetic devices; Vacuum Measurement and Technology.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	1.2
2024	1.50

SJR (SCImago Journal Rank)

Year	Value
2024	0.280

Quartile

Year	Value
2024	Q3

h-index

Year	Value
2024	127

Journal Rank

Year	Value
2024	17340

Journal Citation Indicator

Year	Value
2024	655

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Chemical Engineering, Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Phase change memory technology

  Citation: 851

  Authors: Geoffrey W., Matthew J., Michele, Davide, Kailash, Bryan, Bülent, Chung, Luis A., Alvaro, Bipin, Simone, Rohit S.

• Access devices for 3D crosspoint memory

  Citation: 294

  Authors: Geoffrey W., Rohit S., Kumar, Pritish, Alvaro, Bülent, Hyunsang

• Helium ion microscopy

  Citation: 188

  Authors: Gregor, Vasilisa, Raoul, Bene

• Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication

  Citation: 171

  Authors: Gottlieb S., Raymond J., David B.

• Review Article: FePt heat assisted magnetic recording media

  Citation: 164

  Authors: Dieter, Gregory, Oleksandr, Andreas, Dmitriy, Nataliia Y., Manfred

• Evidence of improved power conversion efficiency in lead-free CsGeI3 based perovskite solar cell heterostructure via <scp>scaps</scp> simulation

  Citation: 149

  Authors: Abhishek, Manish, Hemant, Ankit, Avneesh

• Electrical behavior of <i>β</i>-Ga2O3 Schottky diodes with different Schottky metals

  Citation: 146

  Authors: Yao, Raveena, Jaewoo, Kalyan Kumar, Robert F., Lisa M.

• Review Article: Synthesis, properties, and applications of fluorescent diamond particles

  Citation: 130

  Authors: Olga A., Alexander I., Nicholas A., Marco D., Igor, Alexander

• Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing

  Citation: 124

  Authors: Rui, Xuqian, Zenghui, Christopher J., Philip X.-L.

• Atomic diffusion bonding of wafers with thin nanocrystalline metal films

  Citation: 123

  Authors: T., M.

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