Journal of Semiconductor Technology and Science

Aims & Scope

Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in every aspect of the integrated circuit technology, i.e., VLSI fabrication process technology, VLSI device technology, VLSI circuit design and other novel applications of this mass production technology.

When IC was invented, these people worked together in one place.

However, as the field of IC expanded, our individual knowledge became narrower, creating different branches in the technical society, which has made it more difficult to communicate as a whole.

The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet.

Thus, we decided to go backwards gathering people involved in all VLSI technology in one place.

View Aims & Scope

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Metrics & Ranking

Journal Rank

Year	Value
2024	19960

Journal Citation Indicator

Year	Value
2024	99

SJR (SCImago Journal Rank)

Year	Value
2024	0.222

Quartile

Year	Value
2024	Q3

h-index

Year	Value
2024	23

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering and Materials Science, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• New Memristor-Based Crossbar Array Architecture with 50-% Area Reduction and 48-% Power Saving for Matrix-Vector Multiplication of Analog Neuromorphic Computing

  Citation: 103

  Authors: Son Ngoc, Kyeong-Sik

• Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications

  Citation: 84

  Authors: Rakhi, Manoj, R.S., Mridula

• A Triple-Band Voltage-Controlled Oscillator Using Two Shunt Right-Handed 4^th-Order Resonators

  Citation: 75

  Authors: Wen-Cheng, Sheng-Lyang, Yi-You, Miin-Horng

• Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

  Citation: 58

  Authors: Jung-Shik, Woo-Young

• Charge Controlled Meminductor Emulator

  Citation: 56

  Authors: Maheshwar Pd., Ram Kaji, Changju, Hyongsuk

• 2-D Large Inverse Transform (16×16, 32×32) for HEVC (High Efficiency Video Coding)

  Citation: 55

  Authors: Jong-Sik, Woo-Jin, Seung-Mok, Seong-Soo

• Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

  Citation: 54

  Authors: Purnima, S.K., S.

• Two Phase Clocked Adiabatic Static CMOS Logic and its Logic Family

  Citation: 50

  Authors: Nazrul, Yasuhiro, Toshikazu

• Characteristics of p-Cu₂O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation

  Citation: 45

  Authors: Raid A.

• A Low-power, Mixed-mode Neural Network Classifier for Robust Scene Classification

  Citation: 42

  Authors: Kyuho, Junyoung, Hoi-Jun

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