Journal of Advanced Dielectrics

Aims & Scope

The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems.

The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics: Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches).

Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal).

Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect).

Ferroelectric materials and devices (single crystals and ceramics).

Thin/thick films and devices (ferroelectric memory devices, capacitors).

Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics).

Pyroelectric materials and devices Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials).

Electrooptic and photonic materials.

Energy harvesting and storage materials (polymer, composite, super-capacitor).

Phase transitions and structural characterizations.

Microwave and milimeterwave dielectrics.

Nanostructure, size effects and characterizations.

Engineering dielectrics for high voltage applications (insulation, electrical breakdown).

Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics).

Metrics & Ranking

Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Directory of Open Access Journals (DOAJ)
• Web of Science

Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

Licensing & Copyright

This journal operates under an Open Access model. Articles are freely accessible to the public immediately upon publication. The content is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0), allowing users to share and adapt the work with proper attribution.

Copyright remains with the author(s), and no permission is required for non-commercial use, provided the original source is cited.

Policy Links

This section provides access to essential policy documents, guidelines, and resources related to the journal’s publication and submission processes.

• Aims scope
• Homepage
• Oa statement
• Author instructions
• License terms
• Review url
• Board url
• Copyright url
• Plagiarism url
• Preservation url
• Apc url

Plagiarism Policy

This journal follows a plagiarism policy. All submitted manuscripts are screened using reliable plagiarism detection software to ensure originality and academic integrity. Authors are responsible for proper citation and acknowledgment of all sources, and any form of plagiarism, including self-plagiarism, will not be tolerated.

For more details, please refer to our official: Plagiarism Policy.

APC Details

The journal’s Article Processing Charge (APC) policies support open access publishing in Engineering, Materials Science and Physics and Astronomy, ensuring accessibility and quality in research dissemination.

This journal does not charge a mandatory Article Processing Charge (APC). However, optional open access publication may incur fees based on the publisher’s policies.

Explore journals without APCs for alternative publishing options.

Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• A review on the dielectric materials for high energy-storage application

  Citation: 879

  Authors: Xihong

• DIELECTRIC RELAXATION IN RELAXOR FERROELECTRICS

  Citation: 327

  Authors: ALEXEI A., ZUO-GUANG

• THE CONTRIBUTION OF ELECTRICAL CONDUCTIVITY, DIELECTRIC PERMITTIVITY AND DOMAIN SWITCHING IN FERROELECTRIC HYSTERESIS LOOPS

  Citation: 325

  Authors: HAIXUE, FAWAD, GIUSEPPE, HUANPO, HONGTAO, QINGHUI, TAO, ZHIPENG, MIKE J

• BiFeO₃-BaTiO₃: A new generation of lead-free electroceramics

  Citation: 208

  Authors: Dawei, Ge, Shunsuke, Zhongming, Antonio, Di, Shikuan, Quanliang, Ian M.

• Ferroelectric HfO₂-based materials for next-generation ferroelectric memories

  Citation: 201

  Authors: Zhen, Jingsheng, John

• DEVELOPMENT OF POLYMER-BASED 0–3 COMPOSITES WITH HIGH DIELECTRIC CONSTANT

  Citation: 156

  Authors: LIN, Z.-Y.

• Lead-free piezoelectrics: Current status and perspectives

  Citation: 145

  Authors: Indrani, Neeraj, Andrei

• Contribution of piezoelectric effect, electrostriction and ferroelectric/ferroelastic switching to strain-electric field response of dielectrics

  Citation: 132

  Authors: G., T., X., K. B., H., M. J., H.

• RANDOM FIELDS IN RELAXOR FERROELECTRICS — A JUBILEE REVIEW

  Citation: 119

  Authors: WOLFGANG

• LOSS DETERMINATION METHODOLOGY FOR A PIEZOELECTRIC CERAMIC: NEW PHENOMENOLOGICAL THEORY AND EXPERIMENTAL PROPOSALS

  Citation: 101

  Authors: KENJI, YUAN, SEYIT O.