Integrated Ferroelectrics

Aims & Scope

Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices.

Such devices unite ferroelectric films and semiconductor integrated circuit chips.

The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.

View Aims & Scope

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Metrics & Ranking

Journal Rank

Year	Value
2024	21188

Journal Citation Indicator

Year	Value
2024	467

Impact Factor

Year	Value
2024	0.70

SJR (SCImago Journal Rank)

Year	Value
2024	0.200

Quartile

Year	Value
2024	Q4

h-index

Year	Value
2024	42

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering, Materials Science and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• DESIGN CONSIDERATIONS FOR MEMS-SCALE PIEZOELECTRIC MECHANICAL VIBRATION ENERGY HARVESTERS

  Citation: 632

  Authors: NOËL E., BRIAN L., SANG-GOOK

• NANO-phase SBT-family ferroelectric memories

  Citation: 347

  Authors: J. F., M., N. D., A., C., D.

• BiFeO₃: A Review on Synthesis, Doping and Crystal Structure

  Citation: 277

  Authors: J., A., H., H., L.

• Self-polarization effect in Pb(Zr,Ti)O₃ thin films

  Citation: 154

  Authors: A. L., K. G., D. V., S., N.

• Piezoelectric thin films for mems

  Citation: 151

  Authors: Paul

• Ferroelectric thin films prepared by sol-gel processing

  Citation: 147

  Authors: Yuhuan, John D

• Theory of conduction and breakdown in perovskite thin films

  Citation: 136

  Authors: Rainer, Mareike

• A review of high dielectric materials for DRAM capacitors

  Citation: 117

  Authors: David E.

• A theory of D-E hysteresis loop

  Citation: 116

  Authors: Yoshihiro, Hiroshi

• Dielectric analysis of intergrated ceramic thin film capacitors

  Citation: 100

  Authors: Rainer

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