IEEE Transactions on Nuclear Science

Aims & Scope

The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society.

It is viewed as the primary source of technical information in many of the areas it covers.

As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology.

It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.

The IEEE Transactions on Nuclear Science is published bimonthly.

Its scope includes all aspects of the theory and application of nuclear science and engineering.

It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	1.9
2024	1.90

Journal Rank

Year	Value
2024	11695

Journal Citation Indicator

Year	Value
2024	2171

SJR (SCImago Journal Rank)

Year	Value
2024	0.495

Quartile

Year	Value
2024	Q2

h-index

Year	Value
2024	138

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Energy, Engineering and Physics and Astronomy, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Geant4 developments and applications

  Citation: 5396

  Authors: J., K., J., H., P., M., G., R., S., R., G.A.P., G., G., G., G.G., M., M., G., F., J., V., S., P., A., I., A., S., V., T., F., T., R., M., H., V., S., F., O., F., M., A., B., I., P., K., K., P., L., S., L., J., A., M.G., A., P., G., S., G., T., D., N., S., E., B., A., P., L., M., A., J.P., D.C., D., H.

• The Fourier reconstruction of a head section

  Citation: 1541

  Authors: L. A., B. F.

• Upset hardened memory design for submicron CMOS technology

  Citation: 979

  Authors: T., M., R.

• A Method for Attenuation Correction in Radionuclide Computed Tomography

  Citation: 941

  Authors: Lee-Tzuu

• Basic mechanisms and modeling of single-event upset in digital microelectronics

  Citation: 890

  Authors: P.E., L.W.

• Radiation Effects in MOS Oxides

  Citation: 760

  Authors: James R., Marty R., Daniel M., James A., Paul E., Philippe, VÉronique

• Total ionizing dose effects in MOS oxides and devices

  Citation: 760

  Authors: T.R., F.B.

• Cerium-doped lutetium oxyorthosilicate: a fast, efficient new scintillator

  Citation: 748

  Authors: C.L., J.S.

• Importance of input data normalization for the application of neural networks to complex industrial problems

  Citation: 663

  Authors: J., J.

• Analytic 3D image reconstruction using all detected events

  Citation: 621

  Authors: P.E., J.G.

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