IEEE Transactions on Device and Materials Reliability

Aims & Scope

The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications.

The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market.

This reliability database is the foundation for a quality product, which meets customer expectation.

A product so developed has high reliability.

High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product.

This process of ever increasing reliability and quality will result in a superior product.

In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions.

Our goal is to capture these advances.

An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability.

In addition, the publication is a forum for interdisciplinary studies on reliability.

An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	2.3

SJR (SCImago Journal Rank)

Year	Value
2024	0.533

Quartile

Year	Value
2024	Q2

h-index

Year	Value
2024	82

Journal Rank

Year	Value
2024	10896

Journal Citation Indicator

Year	Value
2024	585

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering and Materials Science, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Radiation-induced soft errors in advanced semiconductor technologies

  Citation: 1204

  Authors: R.C.

• Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

  Citation: 569

  Authors: Gaudenzio, Giovanni, Francesca, Fabiana, Franco, Augusto, Matteo, Enrico

• Review on high-k dielectrics reliability issues

  Citation: 455

  Authors: G., J., M., S., F., C., E., G.

• Controlling Short-Channel Effects in Deep-Submicron SOI MOSFETs for Improved Reliability: A Review

  Citation: 409

  Authors: A., M.J.

• Soft errors in advanced semiconductor devices-part I: the three radiation sources

  Citation: 317

  Authors: R.C.

• Design for soft error mitigation

  Citation: 273

  Authors: M.

• Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology

  Citation: 271

  Authors: V., A.T., R., S.

• A Review on the Reliability of GaN-Based LEDs

  Citation: 247

  Authors: Matteo, Lorenzo-Roberto, Gaudenzio, Enrico

• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

  Citation: 237

  Authors: John F.

• Reliability Study of Phase-Change Nonvolatile Memories

  Citation: 229

  Authors: A., A., F., F., M., D., A.L., R.

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