IEEE Microwave and Wireless Technology Letters
Published by IEEE
ISSN : 2771-957X eISSN : 2771-9588
Abbreviation : IEEE Microw. Wirel. Technol. Lett.
Aims & Scope
The IEEE Microwave and Wireless Technology Letters (MWTL) (formerly IEEE Microwave and Wireless Components Letters (MWCL)) is published monthly to provide short papers (up to 4 pages; 3 pages of text plus up to 1 page of references) of original and significant contributions relevant to all aspects of microwave/millimetre-wave technology, with emphasis on devices, components, circuits, guided wave structures, systems and applications, covering a broad electromagnetic spectrum from megahertz to terahertz.
The MWTL is the preeminent publication of short papers concerning RF and microwave theory and technology.
Its acceptance rate is about 25%, and the median submission-to-first-decision time is within 3 weeks.
View Aims & ScopeMetrics & Ranking
Impact Factor
Year | Value |
---|---|
2025 | 3.4 |
Journal Rank
Year | Value |
---|---|
2024 | 4528 |
Journal Citation Indicator
Year | Value |
---|---|
2024 | 3980 |
SJR (SCImago Journal Rank)
Year | Value |
---|---|
2024 | 1.038 |
Quartile
Year | Value |
---|---|
2024 | Q1 |
h-index
Year | Value |
---|---|
2024 | 136 |
Impact Factor Trend
Abstracting & Indexing
Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.
Subjects & Keywords
Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering and Physics and Astronomy, designed to support cutting-edge academic discovery.
Most Cited Articles
The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.
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<i>W</i>-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz
Citation: 43
Authors: Jeong-Sun, Bob, Joel, Chuong, Erdem, Haw, Dave, Nicholas C., Michael, Ryan, Nivedhita, Patrick
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A mm-Wave Trilayer AlN/ScAlN/AlN Higher Order Mode FBAR
Citation: 38
Authors: Suhyun, Wenhao, Ping, Ding, Zetian, Amir
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A Dual-Band Rectifier Using Half-Wave Transmission Line Matching for 5G and Wi-Fi Bands RFEH/MPT Applications
Citation: 37
Authors: Md. Ahsan, Taimoor, Shiban K., Sembiam R.
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Design of Dual-Band Inverse Class-F Rectifier for Wireless Power Transfer and Energy Harvesting
Citation: 35
Authors: Dang-An, Gia Thang, Hyungseok, Chulhun
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5.9 GHz Longitudinal Leaky SAW Filter With FBW of 9.2% and IL of 1.8 dB Using LN/Quartz Structure
Citation: 30
Authors: Rongxuan, Sulei, Huiping, Zengtian, Peisen, Boyuan, Rui, Fei, Cheng, Weibiao, Feng
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Design of an Extended Continuous-Mode Class-GF Power Amplifier With Multioctave Bandwidth
Citation: 28
Authors: Xuefei, Zhiqun, Zhiwei, Tinwei, Guohua, Chao
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300-GHz-Band Four-Element CMOS-InP Hybrid Phased-Array Transmitter With 36circ Steering Range
Citation: 27
Authors: Ibrahim, Teruo, Adam, Hitoshi, Yuta, Miwa, Hiroshi, Munehiko, Carrel da, Chun, Kota, Chenxin, Ashbir Aviat, Jian, Atsushi, Kenichi, Hiroyuki
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Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications
Citation: 26
Authors: Han Wui, M., Q., A., H., S., I., D., M., P., J., A., T., R., T., N., P., A., I., A., S., P.
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An Ultrahigh-Sensitivity Dual-Mode Microwave Sensor for Microfluidic Applications
Citation: 25
Authors: Wei, Da-Wei, Jing, Shichang, Gaofeng, Wen-Sheng
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A Compact <i>Ka</i>-Band Eight-Element Four-Beam Receiver for Low-Earth-Orbit Satellite Communications in 65-nm CMOS
Citation: 24
Authors: Yuexiaozhou, Nayu, Jingying, Huiyan, Shaogang, Hang, Qun Jane, Chunyi, Zhiwei