ECS Solid State Letters
Published by The Electrochemical Society
ISSN : 2162-8742 eISSN : 2162-8750
Abbreviation : EC Solid State Lett.
Aims & Scope
Cessation.
SSL was launched in 2012 and was published until the end of 2015.
It was dedicated to the rapid dissemination of peer-reviewed and concise research reports in fundamental and applied areas of solid-state science and technology.
SSL is preserved as an archive.
View Aims & ScopeAbstracting & Indexing
Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.
Subjects & Keywords
Journal’s research areas, covering key disciplines and specialized sub-topics in Engineering and Materials Science, designed to support cutting-edge academic discovery.
Most Cited Articles
The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.
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Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process
Citation: 85
Authors: S. H., Y. C., M., D. H., J.
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Fabrication and Characterization of Li7La3Zr2O12 Thin Films for Lithium Ion Battery
Citation: 84
Authors: J., A.
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Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator
Citation: 53
Authors: A.-J., S., K., S. D., H., J.-Y.
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Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor
Citation: 50
Authors: M. P., D., J., M.
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Side Wall Wetting Induced Void Formation due to Small Solder Volume in Microbumps of Ni/SnAg/Ni upon Reflow
Citation: 50
Authors: Y. C., C., K. N.
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Efficient Red Emission of Blue-Light Excitable New Structure Type NaMgPO4:Eu2+ Phosphor
Citation: 49
Authors: S. W., T., T., K., K., M.
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Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications
Citation: 48
Authors: S. H., N., J., S., J., J., S., J., H.
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Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices
Citation: 48
Authors: S.-D., H.-W., S. y., D. S., S. H., H., B.-k., D. W., S.