ECS Journal of Solid State Science and Technology

Aims & Scope

The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.

JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.

View Aims & Scope

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Metrics & Ranking

Impact Factor

Year	Value
2025	2.2
2024	1.80

Journal Rank

Year	Value
2024	13967

Journal Citation Indicator

Year	Value
2024	3275

SJR (SCImago Journal Rank)

Year	Value
2024	0.393

Quartile

Year	Value
2024	Q3

h-index

Year	Value
2024	75

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Abstracting & Indexing

Journal is indexed in leading academic databases, ensuring global visibility and accessibility of our peer-reviewed research.

• Scopus
• Google Scholar
• Web of Science

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Subjects & Keywords

Journal’s research areas, covering key disciplines and specialized sub-topics in Materials Science, designed to support cutting-edge academic discovery.

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Most Cited Articles

The Most Cited Articles section features the journal's most impactful research, based on citation counts. These articles have been referenced frequently by other researchers, indicating their significant contribution to their respective fields.

• Perspective—Opportunities and Future Directions for Ga₂O₃

  Citation: 437

  Authors: Michael A., Akito, Jacob, Jihyun, Fan, S. J.

• Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

  Citation: 378

  Authors: J., P., S., T.

• Scaling-Up of Bulk β-Ga₂O₃Single Crystals by the Czochralski Method

  Citation: 355

  Authors: Zbigniew, Reinhard, Detlef, Klaus, Martin, Mike, Albert, Rainer, Steffen, Matthias

• A Review on How Lanthanide Impurity Levels Change with Chemistry and Structure of Inorganic Compounds

  Citation: 321

  Authors: Pieter

• Review—Ionizing Radiation Damage Effects on GaN Devices

  Citation: 309

  Authors: S. J., F., Erin, M. E., Alexander Y.

• Influence of Covalency on the Mn^{4+ 2}E_g→⁴A_2gEmission Energy in Crystals

  Citation: 296

  Authors: M. G., S. J., A. M.

• Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga₂O₃Layers Grown by MOVPE on (010)-Oriented Substrates

  Citation: 264

  Authors: Michele, Martin, Andreas, Klaus, Robert, Günter

• Ferroelectricity in Gd-Doped HfO₂Thin Films

  Citation: 256

  Authors: S., C., A., S., U., T.

• Atomic Layer Etching at the Tipping Point: An Overview

  Citation: 250

  Authors: G. S., D., C.

• Review—Field-Effect Transistor Biosensing: Devices and Clinical Applications

  Citation: 239

  Authors: Yu-Cheng, Wei-En, Chih-Ting

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